Product Summary

The M28W640FSU70ZA6 is a 64 Mbit (4Mbit x 16) Secure Flash memory. It can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 2.7V to 3.6V VDDQ supply for the Input/Output pins. The M28W640FSU70ZA6 features 64 Mbits respectively and are divided into thirty-two and sixty-four 64-KWord Uniform blocks, respectively. The M28W640FSU70ZA6 is offered in a TBGA64 (10 * 13mm) package.

Parametrics

M28W640FSU70ZA6 absolute maximum ratings: (1)Ambient Operating Temperature :-40℃ to 85℃; (2)Temperature Under Bias:-40℃ to 125℃; (3)Storage Temperature:-55℃ to 155℃; (4)Input or Output Voltage:-0.6V to VDDQ+0.6V; (5)Supply Voltage:-0.6V to 4.1V; (6)Program Voltage:-0.6V to 13V.

Features

M28W640FSU70ZA6 features: (1)supply voltage: VDD = 2.7V to 3.6V Core Power Supply, VDDQ= 2.7V to 3.6V for Input/Output, VPP = 12V for fast Program(optional); (2)access time: 70ns; (3)10μs typical; (4)Double Word Programming Option; (5)Quadruple Word Programming Option ; (6)128 bit User-programmable OTP segment; (7)64 bit Unique Device Identifier; (8)VPP Pin for Write protect of All Blocks; (9)Modify Protection, Read Protection, Device Authentication; (10)automatic stand-by mode; (11)program and erase suspend; (12)100,000 program/erase cycles per block ; (13)electronic signature:Manufacturer Code: 20h, Device Codes:8857h; (14)package: Compliant with Lead-Free Soldering Processes, Lead-Free Version.

Diagrams

M28W640FSU70ZA6 logic diagram

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