Product Summary

The BS62LV8001EIG70 is ahigh performance , very low power CMOS Static Random Access Memory organized as 1,048,576 wordsby 8 bits and operates from a wide range of 2.4V to 5.5V supply voltage. The BS62LV8001EIG70 has an automatic power down feature, reducing the power consumption significantly when chip is deselected. The BS62LV8001EIG70 is available in 48B BGA and 44L TSOP2 packages.

Parametrics

BS62LV8001EIG70 absolute maximum ratings: (1) Terminal Voltage with Respect to GND VTERM: -0.5 to Vcc +0.5V; (2) Temperature Under Bias TBIAS: -40 to +85°C; (3) Storage Temperature TSTG: -60 to +150°C; (4) Power Dissipation PT: 1.0W; (5) DC Output Current IOUT: 20mA.

Features

BS62LV8001EIG70 features: (1) Wide Vccoperation voltage: 2.4V ~ 5.5V; (2) ery low power consumption; (3) High speed access time; (4) Automatic power down when chip is deselected; (5) Three state outputs and TTL compatible; (6) Fully static operation; (7) Data retention supply voltage as low as 1.5V; (8) Easy expansion with CE1, CE2 and OE options.

Diagrams

BS62LV8001EIG70 Pin Configuration