(Hong Kong)
Product Summary
The GE28F640C3TC80 is an advanced+boot block flash memory (C3) of Intel. The GE28F640C3TC80 provides high-performance asynchronous reads in package-compatible densities with a 16 bit data bus. The GE28F640C3TC80 supports read-array mode operations at various I/O voltages(1.8V and 3V)and erase and programoperations at3V or 12V VPP.
Parametrics
GE28F640C3TC80 absolute maximum ratings: (1) Extended Operating Temperature: -40 to +85°C; (2) StorageTemperature: -65 to +125°C; (3) Voltage On Any Pin(except Vcc and Vpp )with Respect to GND: -0.5 to 3.7V; (4) VPP Voltage(for Block Erase and Program) with Respect to GND) : -0.5 to GND: -0.5 to 13.5V; (5) Vcc and VCQQ Supply Voltage with Respect to GND: -0.2 to +3.7V; (6) Output Short Circuit Current: 100mA.
Features
GE28F640C3TC80 features: (1) Flexible Smart Voltage Technology; (2) 1.65V-2.5V or 2.7V-3.6VI/O Option; (3) Optimized Architecture for Code Plus Data Storage; (4) Flexible Block Locking; (5) Low Power Consumption; (6) Extended Temperature Operation; (7) 128-bit Protection Register; (8) Extended Cycling Capability; (9) Standard Surface Mount Packaging; (10) ETOX VII(0.13μm) Flash Technology.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 GE28F640C3TC80 S B93 |
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IC FLASH 64MBIT 80NS 48BGA |
Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||||||
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GE28F160C3TD70 |
Numonyx/Intel |
IC FLASH MEM 16MBIT 3V 46-BGA |
Data Sheet |
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GE28F320C3BC70SB93 |
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IC FLASH 32MBIT 70NS 47BGA |
Data Sheet |
Negotiable |
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GE28F320C3BC90 |
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IC FLASH 32MBIT 90NS 47BGA |
Data Sheet |
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GE28F320C3TC70SB93 |
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IC FLASH 32MBIT 70NS 47BGA |
Data Sheet |
Negotiable |
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GE28F640C3TC80 S B93 |
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IC FLASH 64MBIT 80NS 48BGA |
Data Sheet |
Negotiable |
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GE28F640K3C110 |
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IC FLASH 64MBIT 110NS 56BGA |
Data Sheet |
Negotiable |
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