(Hong Kong)
Product Summary
The IS61C64B-10T is a very high-speed, low power,8192-word by 8-bit static RAM. The IS61C64B-10T is fabricated using high performance CMOS technology of ISSI. The IS61C64B-10T is packaged in the JEDEC standard 28-pin,300-mil SOJ, and TSOP.
Parametrics
IS61C64B-10T absolute maximum ratings: (1) Terminal Voltage with Respect to GND VTERM: -0.5 to +7.0V; (2) Temperature Under Bias TBIAS: -10 to +85°C; (3) Storage Temperature TSTG: -65 to +150°C; (4) Power Dissipation PT: 1.0W; (5) DC Output Current (LOW) IOUT: 20mA.
Features
IS61C64B-10T features: (1) High-speed access time: 10, 12, and 15ns; (2) Automatic power-down when chip is deselected; (3) CMOS low power operation; (4) TTL compatible interface levels; (5) Single 5V power supply; (6) Fully static operation: no clock or refresh required; (7) Three state outputs; (8) One Chip Enables (CE) for increased speed.
Diagrams
