Product Summary

The K6R1016C1D-JC10 is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 K6R1004C1D uses 4 common input and output lines an output enable pin which operates faster than access time at read cycle. The K6R1016C1D-JC10 is fabricated using SAMSUNG advanced CMOS process and designed for high-speed circuit technology. The K6R1016C1D-JC10 is particularly well suited for use in high-density high-speed system applications.

Parametrics

K6R1016C1D-JC10 absolute maximum ratings: (1) Supply Voltage Vcc: 4.5 to 5.5V; (2) Ground Vss: 0V; (3) Input High Voltage VIH: 2.2 to Vcc +0.5V; (4) Input Low Voltage VIL: -0.5 to 0.8V.

Features

K6R1016C1D-JC10 features: (1) Fast Access Time 10ns(Max.) ; (2) Single 5.0V±10% Power Supply; (3) bTTL Compatible Inputs and Outputs; (4) I/O Compatible with 3.3V Device; (5) Fully Static Operation; (6) Three State Outputs; (7) Center Power/Ground Pin Configuration; (8) Operating in Commercial and Industrial Temperature range.

Diagrams

K6R1016C1D-JC10 Pin Configuration