(Hong Kong)
Product Summary
The K7A403609B-PC25 is 4,718,592-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System. The K7A403609B-PC25 is organized as 128K(256K) words of 36(18) bits and integrates address and control registers, a 2-bit burst address counter and added some new functions for high performance cache RAM applications. The K7A403609B-PC25 is fabricated using SAMSUNG high performance CMOS technology and is available in a 100pin TQFP package.
Parametrics
K7A403609B-PC25 absolute maximum ratings: (1) Voltage on VDD Supply Relative to VSS: -0.3 to 4.6V; (2) Voltage on VDDQ Supply Relative to VSS: VDD; (3) Voltage on Input Pin Relative to VSS, VIN: -0.3 to VDD +0.3V; (4) Voltage on I/O Pin Relative to VSS: -0.3 to VDDQ +0.3V; (5) Power Dissipation: 2.2W; (6) Storage Temperature TSTG: -65 to +150°C; (7) Operating Temperature, Commercial: 0 to 70°C, -40 to 85°C; (8) Storage Temperature Range Under Bias: -10 to +85°C.
Features
K7A403609B-PC25 features: (1) Synchronous Operation; (2) 2 Stage Pipelined operation with 4 Burst; (3) On-Chip Address Counter; (4) On-Chip Address and Control Registers; (5) VDD= 3.3V+0.3V/-0.165V Power Supply; (6) 5V Tolerant Inputs Except I/O Pins; (7) Global Write Enable Controls a full bus-width write; (8) Operating in commeical and industrial temperature range.
Diagrams
