Product Summary
The S29GL512N11TFI02 is a 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N11TFI02 is a 512 Mbit, organized as 33,554,432 words or 67,108,864 bytes. The S29GL512N11TFI02 has a 16-bit wide data bus that can also function as an 8-bit wide data bus by using the BYTE# input. The device can be programmed either in the host system or in standard EPROM programmers.
Parametrics
S29GL512N11TFI02 absolute maximum ratings: (1)Storage Temperature, Plastic Packages: –65 to +150℃; (2)Ambient Temperature with Power Applied: –65 to +125℃; (3)Voltage with Respect to Ground: VCC:–0.5 V to +4.0 V; VIO: –0.5 V to +4.0 V; A9, OE#, and ACC: –0.5 V to +12.5 V; All other pins:–0.5 V to VCC + 0.5V; (4)Output Short Circuit Current: 200 mA.
Features
S29GL512N11TFI02 features: (1)Advanced Sector Protection; (2)WP#/ACC input accelerates programming time (when high voltage is applied) for greater throughput during system production. Protects first or last sector regardless of sector protection settings; (3)Hardware reset input (RESET#) resets device; (4)Ready/Busy# output (RY/BY#) detects program or erase cycle completion.
Diagrams
S29GL016A |
Other |
Data Sheet |
Negotiable |
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S29GL01GP |
Other |
Data Sheet |
Negotiable |
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S29GL01GP11FAIR10 |
Spansion |
Flash IC 1GIG 3.0V FLSHMEM |
Data Sheet |
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S29GL01GP11FAIR20 |
Spansion |
Flash 1GB 3.0-3.6V 110ns |
Data Sheet |
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S29GL01GP11FFCR10 |
Spansion |
Flash 1GB 3.0-3.6V 110ns PBF |
Data Sheet |
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S29GL01GP11FFCR20 |
Spansion |
Flash 1GB 3.0-3.6V 110ns PBF |
Data Sheet |
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