Product Summary

The MP6501A is an NPN triple diffused type transistor.

Parametrics

MP6501A absolute maximum ratings: (1)Collector-base voltage, VCBO: 500V; (2)Collector-emitter sustaining voltage, VCEX: 500V; VCEO: 400V; (3)Emitter-base voltage, VEBO: 6V; (4)Collector current, DC, IC: 15A; 1ms, ICP: 30A; (5)Forward current, DC, IF: 15A; IFM: 30A; (6)Base current, IB: 1A; (7)Collector power dissipation, PC: 60W; (8)Junction temperature, Tj: 150℃; (9)Storage temperature range, Tstg: -40 to 125℃.

Features

MP6501A features: (1)The electrodes are is isolated from case; (2)6 darlington transistor built into in 1 package; (3)High input impendence; (4)High DC current gain: hEF=100; (5)Low saturation voltage: VCE(sat)=2.1V.

Diagrams

MP6501A block diagram