Product Summary

The E28F128J3A150 is a 0.25 μ 3 Volt Intel StrataFlash memory. The E28F128J3A150 contains high-density memories organized as 16 Mbytes or 8 Mwords (128-Mbit), 8 Mbytes or 4 Mwords (64-Mbit), and 4 Mbytes or 2 Mwords (32-Mbit). The E28F128J3A150 can be accessed as 8- or 16-bit words. The 128-Mbit device is organized as one-hundred-twenty-eight 128-Kbyte (131,072 bytes) erase blocks. The 64-Mbit device is organized as sixty-four 128-Kbyte erase blocks while the 32-Mbits device contains thirty-two 128-Kbyte erase blocks.

Parametrics

E28F128J3A150 absolute maximum ratings: (1)Temperature under Bias Expanded: –25 to +85℃; (2)Storage Temperature:–65 to +125℃; (3)Voltage On Any Pin: –2.0 V to +5.0 V; (4)Output Short Circuit Current: 100 mA.

Features

E28F128J3A150 features: (1)High-Density Symmetrically-Blocked Architecture; (2)High Performance Interface Asynchronous Page Mode Reads; (3)2.7 V–3.6 V VCC Operation; (4)128-bit Protection Register; (5)Absolute Protection with VPEN = GND; (6)Power Transitions; (7)Packaging: 56-Lead TSOP Package; (8)Cross-Compatible Command Support Intel Basic Command Set; (9)32-Byte Write Buffer: 6 μs per Byte Effective Programming ; (10)Time; (11)Automation Suspend Options; (12)0.25 μ Intel StrataFlash Memory Technology.

Diagrams

E28F128J3A150 block diagram

E28F008S5120
E28F008S5120

IC FLASH 8MBIT 120NS 40TSOP
Data Sheet
Negotiable 
E28F320J3A110SL5FS
E28F320J3A110SL5FS

IC FLASH 32MBIT 110NS 56TSOP
Data Sheet
Negotiable