(Hong Kong)
Product Summary
The MSM56V16160J-10T3 is a 2-bank × 524,288-word × 16-bit synchronous dynamic RAM, fabricated in Oki’s CMOS silicon-gate process technology. The device operates at 3.3 V. The inputs and outputs are LVTTL compatible.
Parametrics
MSM56V16160J-10T3 absolute maximum ratings: (1)Voltage on Any Pin Relative to VSS Rating, VIN, VOUT: -0.5 to VCC + 0.5 V; (2)VCC Supply Voltage, VCC, VCCQ: -0.5 to 4.6 V; (3)Storage Temperature, Tstg: -55 to 150℃; (4)Power Dissipation, PD: 600 mW; (5)Short Circuit Current, IOS: 50 mA; (6)Operating Temperature, Topr: 0 to 70℃.
Features
MSM56V16160J-10T3 features: (1)Silicon gate, quadruple polysilicon CMOS, 1-transistor memory cell; (2)2-bank ×524,288-word ×16-bit configuration; (3)3.3 V power supply, ±0.3 V tolerance; (4)Input: LVTTL compatible; (5)Output: LVTTL compatible; (6)Refresh: 4096 cycles/64 ms; (7)Programmable data transfer mode, CAS latency (1, 2, 3); CAS latency (2, 3); Burst length (1, 2, 4, 8, full page); Burst length (1, 2, 4, 8); (8)Data scramble (sequential, interleave); (9)CBR auto-refresh, Self-refresh capability.
Diagrams
