(Hong Kong)
Product Summary
The S29PL064J60BFI120E is a 128/128/64/32 Mbit, 3.0 volt-only Page Mode and Simultaneous Read/Write Flash memory device organized as 8/8/4/2 Mwords. The word-wide data (x16) appears on DQ15-DQ0. The S29PL064J60BFI120E can be programmed in-system or in standard EPROM programmers. A 12.0 V VPP is not required for write or erase operations.
Parametrics
S29PL064J60BFI120E absolute maximum ratings: (1)Storage Temperature Plastic Packages: –65°C to +150°C; (2)Ambient Temperature with Power Applied: –65°C to +125°C; (3)VCC: –0.5 V to +4.0 V; (4)A9, OE#, and RESET#: –0.5 V to +13.0 V; (5)WP#/ACC: –0.5 V to +10.5 V; (6)All other pins: –0.5 V to VCC +0.5 V; (7)Output Short Circuit Current: 200 mA．
Features
S29PL064J60BFI120E features: (1)128/128/64/32 Mbit Page Mode devices; (2)Page size of 8 words: Fast page read access from random locations within the page; (3)Single power supply operation; (4)Full Voltage range: 2.7 to 3.6 volt read, erase, and program operations for battery-powered applications; (5)Dual Chip Enable inputs (only in PL129J); (6)Two CE# inputs control selection of each half of the memory space; (7)Simultaneous Read/Write Operation; (8)Both top and bottom boot blocks in one device; (9)Manufactured on 110 nm process technology; (10)Data Retention: 20 years typical; (11)Cycling Endurance: 1 million cycles per sector typical．
Diagrams
