(Hong Kong)
Product Summary
The K4M563233G-HN75 is a 268,435,456 bits synchronous high data rate Dynamic RAM. The K4M563233G-HN75 is organized as 4 x 2,097,152 words by 32 bits, fabricated with high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst lengths and programmable latencies allow the K4M563233G-HN75 to be useful for a variety of high bandwidth and high performance memory system applications.
Parametrics
K4M563233G-HN75 absolute maximum ratings: 1)Voltage on any pin relative to Vss, VIN, VOUT: -1.0 to 4.6 V; (2)Voltage on VDD supply relative to Vss, VDD, VDDQ: -1.0 to 4.6 V; (3)Storage temperature, TSTG: -55 to +150℃; (4)Power dissipation, PD: 1.0 W; (5)Short circuit current, IOS: 50 mA.
Features
K4M563233G-HN75 features: (1)3.0V & 3.3V power supply; (2)LVCMOS compatible with multiplexed address; (3)Four banks operation; (4)MRS cycle with address key programs: CAS latency (1, 2 & 3); Burst length (1, 2, 4, 8 & Full page); Burst type (Sequential & Interleave); (5)EMRS cycle with address key programs; (6)All inputs are sampled at the positive going edge of the system clock; (7)Burst read single-bit write operation; (8)Special Function Support PASR (Partial Array Self Refresh); Internal TCSR (Temperature Compensated Self Refresh); (9)DQM for masking; (10)Auto refresh; (11)64ms refresh period (4K cycle); (12)Commercial Temperature Operation (-25℃ to 70℃); (13)Extended Temperature Operation (-25℃ to 85℃); (14)90Balls FBGA ( -FXXX -Pb, -HXXX -Pb Free).
Diagrams
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