(Hong Kong)
Product Summary
The TC58FVT160ATG70 is a 16,777,216-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 2,097,152 words × 8 bits or as 1,048,576 words × 16 bits. The TC58FVT160ATG70 features commands for Read, Program and Erase operations to allow easy interfacing with microprocessors. The commands are based on the JEDEC standard. The Program and Erase operations are automatically executed in the chip.
Parametrics
TC58FVT160ATG70 absolute maximum ratings: (1)VDD, VDD Supply Voltage: -0.6 to 4.6V; (2)VIN, Input Voltage: -0.6 to VDD + 0.5V (≤ 4.6); (3)VDQ, Input/Output Voltage: -0.6 to VDD + 0.5V (≤ 4.6); (4)VIDH, Maximum Input Voltage for A9, OE and RESET: 13.0V; (5)PD, Power Dissipation: 126 mW; (6)TSOLDER, Soldering Temperature (10 s): 260℃; (7)TSTG, Storage Temperature: -55 to 150℃; (8)TOPR, Operating Temperature: -40 to 85℃; (9)IOSHORT, Output Short-Circuit Current: 100 mA.
Features
TC58FVT160ATG70 features: (1)Power supply voltage: VDD = 2.7 V~3.6 V; (2)Operating temperature: Ta = -40℃~85℃; (3)Organization: 2M × 8 bits / 1M × 16 bits; (4)Block erase architecture: 1 × 16 Kbytes / 2 × 8 Kbytes; 1 × 32 Kbytes / 31 × 64 Kbytes; (5)Mode control: Compatible with JEDEC standard commands; (6)?Erase/Program cycles: 105 cycles typ; (7)Access time: 70 ns (CL: 30 pF); 100 ns (CL: 100 pF) ; (8)Power consumption: 5 μA (Standby); 30 mA (Read operation); 15 mA (Program/Erase operations).
Diagrams
