Product Summary

The AT28C010E-12TU is a high-performance electrically-erasable and programmable readonly memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmels advanced nonvolatile CMOS technology, the AT28C010E-12TU offers access times to 120 ns with power dissipation of just 220 mW. When the device is deselected, the CMOS standby current is less than 200 μA. The AT28C010E-12TU is accessed like a Static RAM for the read or write cycle without the need for external components. The device contains a 128-byte page register to allow writing of up to 128 bytes simultaneously. During a write cycle, the address and 1 to 128 bytes of data are internally latched, freeing the address and data bus for other operations.

Parametrics

AT28C010E-12TU absolute maximum ratings: (1)Temperature Under Bias: -55℃ to +125℃; (2)Storage Temperature: -65℃ to +150℃ ; (3)All Input Voltages(including NC Pins) with Respect to Ground: -0.6V to +6.25V; (4)All Output Voltages with Respect to Ground: -0.6V to VCC + 0.6V; (5)Voltage on OE and A9 with Respect to Ground: -0.6V to +13.5V.

Features

AT28C010E-12TU features: (1)Fast Read Access Time: 120 ns; (2)Automatic Page Write Operation: Internal Address and Data Latches for 128 Bytes; Internal Control Timer; (3)Fast Write Cycle Time: Page Write Cycle Time: 10 ms Maximum; 1 to 128-byte Page Write Operation; (4)Low Power Dissipation: 40 mA Active Current; 200 μA CMOS Standby Current; (5)Hardware and Software Data Protection; (6)DATA Polling for End of Write Detection; (7)High Reliability CMOS Technology: Endurance: 104 or 105 Cycles; Data Retention: 10 Years; (8)Single 5V ± 10% Supply; (9)CMOS and TTL Compatible Inputs and Outputs; (10)JEDEC Approved Byte-wide Pinout; (11)Industrial Temperature Ranges; (12)Green (Pb/Halide-free) Packaging Option.

Diagrams

AT28C010E-12TU block diagram

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