Product Summary

The BS616LV8017EIP70 is a high performance, very low power CMOS Static Random Access Memory organized as 524,288 words by 16 bits and operates from a wide range of 2.4V to 5.5V supply voltage. The BS616LV8017EIP70 has an automatic power down feature, reducing the power consumption significantly when chip is deselected. The BS616LV8017EIP70 is available in 48B BGA and 44L TSOP2 packages.

Parametrics

BS616LV8017EIP70 absolute maximum ratings: (1) Terminal Voltage with Respect to GND VTERM: -0.5 to Vcc +0.5V; (2) Temperature Under Bias TBIAS: -40 to +85°C; (3) Storage Temperature TSTG: -60 to +150°C; (4) Power Dissipation PD: 1W; (5) DC Output Current IOUT: 20mA.

Features

BS616LV8017EIP70 features: (1) Wide Vccoperation voltage : 2.4~5.5V; (2) Very low power consumption; (3) High speed access time: 55ns, 70ns; (4) Automatic power down when chip is deselected; (5) Three state outputs and TTL compatible; (6) Fully static operation; (7) Data retention supply voltage as low as 1.5V; (8) Easy expansion with CE and OE options; (9) I/O Configuration x8/x16 selectable by LB and UB pin.

Diagrams

BS616LV8017EIP70 Pin Configuration