(Hong Kong)
Product Summary
The BTS736L2 is an N channel vertical power MOSFET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. It can Provide embedded protective functions. The applications of the dBTS736L2 include μC compatible high-side power switch with diagnostic feedback for 5V, 12V and 24V grounded loads, All types of resistive, inductive and capacitve loads, Most suitable for loads with high inrush currents, so as lamps and Replaces electromechanical relays, fuses and discrete circuits.
Parametrics
BTS736L2 absolute maximum ratings: (1)Supply voltage, Vbb: 43 V; (2)Supply voltage for full short circuit protection, Vbb: 24 V; (3)Load dump protection, VLoad dump: 60 V; (4)Operating temperature range, Tj: -40 to 150℃; (5)Storage temperature range, Tstg: -55 to +150℃; (6)Power dissipation, Ptot: 3.8 W; (7)Maximal switchable inductance, ZL: 19.0mH; (8)Electrostatic discharge capability, VESD: 1.0kV; (9)Input voltage (DC), VIN: -10 to +16 V.
Features
BTS736L2 features: (1)Very low standby current; (2)CMOS compatible input; (3)Fast demagnetization of inductive loads; (4)Stable behaviour at undervoltage; (5)Wide operating voltage range; (6)Logic ground independent from load ground.
Diagrams
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 BTS736L2 |
Infineon Technologies |
Power Switch ICs - POE / LAN PROFET SMART 2 CH Hi Side Pwr SW |
Data Sheet |
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