Product Summary

The EDS2532EEBH-9ATT-E is a 256M bits SDRAM.

Parametrics

EDS2532EEBH-9ATT-E absolute maximum ratings: (1) Voltage on any pin relative to VSS VT: -0.5 to VDD +0.3V (≤2.4 max); (2) Supply voltage relative to VSS VDD: -0.5 to +2.4V; (3) Short circuit output current IOS: 50mA; (4) Power dissipation: 1.0W; (5) Operating ambient temperature TA: -20 to +85°C; (6) Storage temperature Tstg: -55 to +125 °C.

Features

EDS2532EEBH-9ATT-E features: (1) ×32 organization; (2) Single pulsed /RAS; (3) Burst read/write operation and burst read/single write operation capability; (4) Byte control by DQM; (5) Wide temperature range TA: -20 to +85°C.

Diagrams

EDS2532EEBH-9ATT-E Pin Configuration