(Hong Kong)
Product Summary
The K4S560832H-UC75 is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 8 bits / 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG high performance CMOS technology.Range of operating frequencies, programmable burst length and programmable latencies allow the K4S560832H-UC75 to be useful for a variety of high bandwidth, high performance memory system applications.
Parametrics
K4S560832H-UC75 absolute maximum ratings: (1) Voltage on any pin relative to Vss, VIN, VOUT: -1.0 to 4.6V; (2) Voltage on VDD supply relative to Vss, VDD, VDDQ: -1.0 to 4.6V; (3) Storage temperature: -55 to +150°C; (4) Power dissipation PD: 1W; (5) Short circuit current IOs: 50mA.
Features
K4S560832H-UC75 features: (1) JEDEC standard 3.3V power supply; (2) LVTTL compatible with multiplexed address; (3) MRS cycle with address key programs; (4) All inputs are sampled at the positive going edge of the system clock; (5) Burst read single-bit write operation; (6) DQM (x8) & L(U)DQM (x16) for masking; (7) Auto & self refresh; (8) 54pin TSOP II Lead-Free and Halogen-Free package.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 K4S560832H-UC75 |
Other |
|
Data Sheet |
Negotiable |
|
||||
| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||
|
K4S510432B |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
K4S510832B |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
K4S510832M |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
K4S511533F - Y(P)C |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
K4S511533F - Y(P)F |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
K4S511533F - Y(P)L |
Other |
|
Data Sheet |
Negotiable |
|
||||
