(Hong Kong)
Product Summary
The MBM29PDS322TE10PBT-75-ER is a 32M-bit, 1.8 V-only Flash memory organized as 2M words of 16 bits each. The device is offered in 63-ball FBGA package. This device is designed to be programmed in system with standard system 1.8 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The MBM29PDS322TE10PBT-75-ER can also be reprogrammed in standard EPROM programmers.
Parametrics
MBM29PDS322TE10PBT-75-ER absolute maximum ratings: (1)Storage Temperature, Tstg: -55 to +125℃; (2)Ambient Temperature with Power Applied, TA: -40 to +85℃; (3)Voltage with Respect to Ground All pins except A9, OE, and RESET, VIN, VOUT: -0.5 to VCC+0.5 V; (4)Power Supply Voltage (Note 1) VCC: -0.5 to +3.0 V; (5)A9, OE, and RESET (Note 2), VIN: -0.5 to +11.5 V; (6)WP/ACC (Note 3), VACC: -0.5 to +10.5 V.
Features
MBM29PDS322TE10PBT-75-ER features: (1)0.23 μm Process Technology; (2)Simultaneous Read/Write operations (Dual Bank) Host system can program or erase in one bank, and then read immediately and simultaneously from the other bank with zero latency between read and write operations. Read-while-erase; Read-while-program; (3)High performance Page Mode, 45 ns maximum page access time (100 ns random access time). 4 words Page Size; (4)Single 1.8 V read, program, and erase Minimized system level power requirements; (5)Compatible with JEDEC-standard commands Use the same software commands as E2PROMs; (6)Compatible with JEDEC-standard world-wide pinouts 63-ball FBGA (Package suffix: PBT); (7)Minimum 100,000 program/erase cycles.
Diagrams
