(Hong Kong)
Product Summary
The TE28F008B3B90 is an Advanced Boot Block flash memory, which is optimized for low power, portable systems. The TE28F008B3B90 features 1.65 V–2.5 V or 2.7 V– 3.6 V I/Os and a low VCC/VPP operating range of 2.7 V–3.6 V for read, program, and erase operations. In addition the TE28F008B3B90 is capable of fast programming at 12 V. Throughout this document, the term 2.7 V refers to the full voltage range 2.7 V–3.6 V (except where noted otherwise) and VPP = 12 V refers to 12 V ±5%. Section 1.0 and 2.0 provide an overview of the flash memory family including applications, pinouts and pin descriptions. Section 3.0 describes the memory organization and operation for these products.
Parametrics
TE28F008B3B90 absolute maximum ratings: (1)Extended Operating Temperature During Read : –40 °C to +85 °C, During Block Erase and Program: –40 °C to +85 °C; (2)Temperature Under Bias : –40 °C to +85 °C; (3)Storage Temperature: –65 °C to +125 °C; (4)Voltage on Any Pin (except VCC, VCCQ and VPP)with Respect to GND : –0.5 V to 3.7 V; (5)VPP Voltage (for Block Erase and Program)with Respect to GND : –0.5 V to +13.5 V; (6)VCC and VCCQ Supply Voltage with Respect to GND : –0.2 V to +3.7V; (7)Output Short Circuit Current: 100 mA.
Features
TE28F008B3B90 features: (1)2.7 V–3.6 V Read/Program/Erase; (2)12 V VPP Fast Production Programming; (3)Eight 8-KB Blocks for Data, Top or Bottom Locations; (4)Up to Sixty-Three 64-KB Blocks for Code; (5)n Block Locking; (6)VCC-Level Control through WP# n Low Power Consumption; (7)10 mA Typical Read Current; (8)System Interrupt Manager; (9)Supports Parameter Storage, Streaming Data (e.g., Voice).
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