(Hong Kong)
Product Summary
The IS61WV51216BLL-10TLI is a high-speed, 8M-bit static RAM organized as 512K words by 16 bits. The IS61WV51216BLL-10TLI is fabricated using high-performance CMOS technology of ISSI. When CE is HIGH (deselected) , the IS61WV51216BLL-10TLI assumes astandby mode at which the power dissipation can be reduced down with CMOS input levels.
Parametrics
IS61WV51216BLL-10TLI absolute maximum ratings: (1) Terminal Voltage with Respect to GND VTERM: -0.5 to VDD +0.5V; (2) VDD Relates to GND VDD: -0.3 to 4.0V; (3) Storage Temperature TSTG: -65 to +150°C; (4) Power Dissipation PD: 1.0W.
Features
IS61WV51216BLL-10TLI features: (1) High-speed access times: 8, 10, 20ns; (2) High-performance, low-power CMOS process; (3) Multiple center power and ground pins for greater noise immunity; (4) Fully static operation: no clock or refresh required; (5) TTL compatible inputs and outputs; (6) Industrial and Automotive Temperature Support; (7) Lead-free available; (8) Data control for upper and lower bytes.
Diagrams
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 IS61WV51216BLL-10TLI |
ISSI |
SRAM 8M (512Kx16) 10ns Async SRAM 3.3v |
Data Sheet |
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IS61WV51216BLL-10TLI-TR |
ISSI |
SRAM 8M (512Kx16) 10ns Async SRAM 3.3v |
Data Sheet |
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