Product Summary

The K4H511638F-HCCC is 536,870,912 bits of double data rate synchronous DRAM organized as 4x 33,554,432 / 4x 16,777,216 / 4x 8,388,608 words by 4/8/16bits, fabricated with SAMSUNG high performance CMOS technology. The K4H511638F-HCCC features with Data Strobe allow extremely high performance up to 400Mb/s per pin. Range of operating frequencies, programmable burst length and programmable latencies allow the K4H511638F-HCCC to be useful for a variety of high performance memory system applications.

Parametrics

K4H511638F-HCCC absolute maximum ratings: (1) Voltage on any pin relative to Vss, VIN, VOUT: -0.5 to 3.6V; (2) Voltage on VDD & VDDQ supply relative to Vss. VDD, VDDQ: -1.0 to 3.6V; (3) Storage temperature Tstg: -55 t0 +150°C; (4) Short circuit current IOS: 50mA.

Features

K4H511638F-HCCC features: (1) Double-data-rate architecture; two data transfers per clock cycle; (2) Bidirectional data strobe [DQS] (x4,x8) & [L(U)DQS] (x16) ; (3) Four banks operation; (4) Differential clock inputs(CK and CK) ; (5) DLL aligns DQ and DQS transition with CK transition; (6) 7.8us refresh interval(8K/64ms refresh); (7) 66pin TSOP II Lead-Free & Halogen-Free package; (8) RoHS compliant.

Diagrams

K4H511638F-HCCC Pin Configuration