(Hong Kong)
Product Summary
The K4S280832K-UC75 is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 8 bits / 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technology. Range of operating frequencies, programmable burst length and programmable latencies allow the K4S280832K-UC75 to be useful for a variety of high bandwidth, high performance memory system applications.
Parametrics
K4S280832K-UC75 absolute maximum ratings: (1) Voltage on any pin relative to Vss, VIN, VOUT: -1.0 to 4.6V; (2) Voltage on VDD supply relative to Vss, VDD, VDDQ: -1.0 to 4.6V; (3) Storage temperature Tstg: -55 to +150°C; (4) Power dissipation PD: 1W; (5) Short circuit current IOS: 50mA.
Features
K4S280832K-UC75 features: (1) JEDEC standard 3.3V power supply; (2) LVTTL compatible with multiplexed address; (3) Four banks operation; (4) RS cycle with address key programs; (4) All inputs are sampled at the positive going edge of the system clock; (5) Burst read single-bit write operation; (6) DQM (x8) & L(U)DQM (x16) for masking; (7) Auto & self refresh; (8) 64ms refresh period (4K Cycle) ; (9) 54pin TSOP II Lead-Free and Halogen-Free package; (10) RoHS compliant.
Diagrams
