Product Summary

The MSM56V16160F-8TSKR1 is a 2-Bank × 524,288-word × 16 bit Synchronous dynamic RAM, fabricated in OKI’s CMOS silicon-gate process technology. The MSM56V16160F-8TSKR1 operates at 3.3V. The inputs and outputs are LVTTL compatible.

Parametrics

MSM56V16160F-8TSKR1 absolute maximum ratings: (1)Voltage on Any Pin Relative to VSS, VIN, VOUT: -0.5 to VCC + 0.5 V; (2)VCC Supply Voltage, VCC, VCCQ: -0.5 to 4.6 V; (3)Storage Temperature, Tstg: -55 to 150℃; (4)Power Dissipation, PD: 600 mW; (5)Short Circuit Current, IOS: 50 mA; (6)Operating Temperature, Topr: 0 to 70℃.

Features

MSM56V16160F-8TSKR1 features: (1)Silicon gate , quadruple polysilicon CMOS , 1-transistor memory cell; (2)2-bank × 524,288-word × 16bit configuration; (3)3.3V power supply ± 0.3V tolerance; (4)Input: LVTTL compatible; (5)Output: LVTTL compatible; (6)Refresh: 4096 cycles/64 ms; (7)Programmable data transfer mode, CAS Latency (1,2,3); Burst Length (1,2,4,8,Full page); Data scramble (sequential , interleave); (8)CBR auto-refresh, Self-refresh capability; (9)Package: 50-pin 400mil plastic TSOP (Type II) (TSOPII50-P-400-0.80-K).

Diagrams

MSM56V16160F-8TSKR1 block diagram