Product Summary

The SST29VE512-200-4C-EH is a 128K x8 CMOS Page-Write EEPROM manufactured with SSTs proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST29VE512-200-4C-EH writes with a single power supply. Internal Erase/Program is transparent to the user. The SST29VE512-200-4C-EH conforms to JEDEC standard pinouts for byte-wide memories.

Parametrics

SST29VE512-200-4C-EH absolute maximum ratings: (1)Temperature Under Bias: -55°C to +125°C; (2)Storage Temperature: -65°C to +150°C; (3)D. C. Voltage on Any Pin to Ground Potential: -0.5V to VDD + 0.5V; (4)Transient Voltage (<20 ns)on Any Pin to Ground Potential: -1.0V to VDD + 1.0V; (5)Voltage on A9 Pin to Ground Potential: -0.5V to 14.0V; (6)Package Power Dissipation Capability (Ta = 25°C): 1.0W; (7)Through Hold Lead Soldering Temperature (10 Seconds): 300°C; (8)Surface Mount Lead Soldering Temperature (3 Seconds): 240°C; (9)Output Short Circuit Current1: 100 mA.

Features

SST29VE512-200-4C-EH features: (1)Single Voltage Read and Write Operations; (2)Superior Reliability; (3)Low Power Consumption: Active Current: 20 mA (typical)for 5V and 10 mA (typical)for 3.0/2.7V; (4)Fast Page-Write Operation; (5)Fast Read Access Time; (6)Latched Address and Data; (7)Automatic Write Timing: Internal VPP Generation; (8)End of Write Detection: Toggle Bit; (9)Hardware and Software Data Protection; (10)Product Identification can be accessed via Software Operation; (11)TTL I/°Compatibility; (12)JEDEC Standard: Flash EEPROM Pinouts and command sets; (13)Packages Available.

Diagrams

SST29VE512-200-4C-EH pin connection

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
SST29VE512-200-4C-EH
SST29VE512-200-4C-EH
Greenliant
Flash 64K X 8 200ns
Data Sheet
0-1: $1.08
1-50: $0.98
50-100: $0.90
100-500: $0.85
SST29VE512-200-4C-EHE
SST29VE512-200-4C-EHE
Greenliant
Flash 64K X 8 200ns
Data Sheet
Negotiable