(Hong Kong)
Product Summary
The K9WBG08U1M-PCB0 is a 256m x 8 bit / 128m x 16 bit nand flash memory. Offered in 256Mx8bit or 128Mx16bit, the K9WBG08U1M-PCB0 is 2G bit with spare 64M bit capacity. Its NAND cell provides the most costeffective solution for the solid state mass storage market. A program operation can be performed in typical 300ms on the 2112- byte(X8 device) or 1056-word(X16 device) page and an erase operation can be performed in typical 2ms on a 128K-byte(X8 device) or 64K-word(X16 device) block. Data in the data page can be read out at 80ns(1.8V device) or 50ns(3.3V device) cycle time per byte(X8 device) or word(X16 device). The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9WBG08U1M-PCB0 extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9WBG08U1M-PCB0 is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility. An ultra high density solution having two 2Gb stacked with two chip selects is also available in standard TSOPI package.
Parametrics
K9WBG08U1M-PCB0 absolute maximum ratings: (1) Voltage on any pin relative to VSS VIN/OUT －0.6 to + 2.45, －0.6 to + 4.6 V; (2) Voltage on any pin relative to VSSVCC －0.2 to + 2.45, －0.6 to + 4.6 V; (3) Temperature Under Bias K9XXGXXXXM－XCB0 TBIAS: －10 to +125 °C; (4) Storage Temperature K9XXGXXXXM－XCB0 TSTG: －65 to +150 °C; (5) Short Circuit Current Ios: 5 mA.
Features
K9WBG08U1M-PCB0 features: (1) Fast Write Cycle Time: Program time : 300ms(Typ.), Block Erase Time : 2ms(Typ.); (2) Command/Address/Data Multiplexed I/O Port; (3) Hardware Data Protection: Program/Erase Lockout During Power Transitions; (4) Reliable CMOS Floating-Gate Technology: Endurance : 100K Program/Erase Cycles, Data Retention : 10 Years; (5) Command Register Operation; (6) Cache Program Operation for High Performance Program; (7) Power-On Auto-Read Operation; (8) Intelligent Copy-Back Operation; (9) Unique ID for Copyright Protection.
Diagrams
