(Hong Kong)
Product Summary
The KM416C256DT-6 is 262,144 x 16 bit Fast Page Mode CMOS DRAM. The KM416C256DT-6 is fabricated using Samsung advanced CMOS process to realize high band-width, low power consumption and high reliability. The KM416C256DT-6 may be used as graphic memory unit for microcomputer, personal computer and portable machines.
Parametrics
KM416C256DT-6 absolute maximum ratings: (1) Voltage on any pin relative to VSS: -0.5 to +4.6V; (2) Voltage on VCC supply relative to VSS: -0.5 to +4.6V; (3) Storage Temperature: -55 to +150°C; (4) Power Dissipation: 1W; (5) Short Circuit Output Current: 50mA.
Features
KM416C256DT-6 features: (1) Fast Page Mode operation; (2) 2 CAS Byte/Wrod Read/Write operation; (3) Self-refresh capability (L-ver only) ; (4) TTL(5V)/LVTTL (3.3V) compatible inputs and outputs; (5) Early Write or output enable controlled write; (6) Available in 40-pin SOJ 400mil and 44 (40)-pin
Diagrams
