Product Summary

The NAND512W3A2BN6 is an NAND Flash 528 Byte/ 264 Word Page Flash memory that uses the Single Level Cell (SLC) NAND cell technology. It is referred to as the Small Page family. The NAND512W3A2BN6 ranges from 128Mbits to 1Gbit and operate with either a 1.8V or 3V voltage supply. The size of a Page is either 528 Bytes (512 + 16 spare) or 264 Words (256 + 8 spare) depending on whether the device has a x8 or x16 bus width.

Parametrics

NAND512W3A2BN6 absolute maximum ratings: (1)TBIAS, Temperature Under Bias: -50 to 125℃; (2)TSTG, Storage Temperature: -65 to 150℃; (3)VIO, Input or Output Voltage, 1.8V devices: -0.6 to 2.7 V; 3 V devices: -0.6 to 4.6 V; (4)VDD, Supply Voltage, 1.8V devices: -0.6 to 2.7 V; 3 V devices: - 0.6 to 4.6 V.

Features

NAND512W3A2BN6 features: (1)HIGH DENSITY NAND FLASH MEMORIES, Up to 1 Gbit memory array; Up to 32 Mbit spare area; Cost effective solutions for mass storage; (2)applications; (3)NAND INTERFACE, x8 or x16 bus width; Multiplexed Address/ Data; Pinout compatibility for all densities; (4)SUPPLY VOLTAGE, 1.8V device: VDD = 1.7 to 1.95V; 3.0V device: VDD = 2.7 to 3.6V; (5)PAGE SIZE, x8 device: (512 + 16 spare) Bytes; x16 device: (256 + 8 spare) Words; (6)BLOCK SIZE, x8 device: (16K + 512 spare) Bytes; x16 device: (8K + 256 spare) Words.

Diagrams

NAND512W3A2BN6 block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
NAND512W3A2BN6E
NAND512W3A2BN6E
STMicroelectronics
Flash 2.7-3.6V 512M(64Mx8)
Data Sheet
Negotiable 
NAND512W3A2BN6F
NAND512W3A2BN6F
STMicroelectronics
Flash NAND 512 MEG
Data Sheet
Negotiable