Product Summary

The S29GL016A10BFIW10 is a 3.0-Volt single-power Flash memory manufactured using 200 nm MirrorBit technology. The S29GL016A10BFIW10 requires only a single 3.0-Volt power supply for both read and write functions. In addition to a VCC input, a high-voltage accelerated program (ACC) feature provides shorter programming times through increased current on the WP#/ACC input. This feature of the S29GL016A10BFIW10 is intended to facilitate factory throughput during system production, but may also be used in the field if desired.

Parametrics

S29GL016A10BFIW10 absolute maximum ratings: (1)Storage Temperature, Plastic Packages: –65°C to +150°C; (2)Ambient Temperature with Power Applied: –65°C to +125°C; (3)Voltage with Respect to Ground VCC: –0.5 V to +4.0 V, A9, OE#, ACC and RESET#: –0.5 V to +12.5 V, All other pins: –0.5 V to VCC+0.5 V; (4)Output Short Circuit Current: 200 mA.

Features

S29GL016A10BFIW10 features: (1)Manufactured on 200 nm MirrorBit process technology; (2)Secured Silicon Sector region; (3)Flexible sector architecture; (4)Compatibility with JEDEC standards; (5)100,000 erase cycles typical per sector; (6)20-year data retention typical; (7)Sector Group Protection: hardware-level method of preventing write operations within a sector group; (8)Temporary Sector Unprotect: VID-level method of charging code in locked sectors.

Diagrams

S29GL016A10BFIW10 pin connection